METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of forming a fin with a high precision and a sufficient yield. SOLUTION: This invention relates to the method of manufacturing the semiconductor device, including the steps of: making an active region 4 a concave portion 36 by setting a height of the active region 4 lower than that of an element isolation region 3; forming a sidewall 37 in a sidewall of the concave portion 36; selectively carrying out an epitaxial growth of a silicon film 38 on a semiconductor substrate 2 by exposing the semiconductor substrate 2 on a bottom face of the concave portion 36; carrying out a thermal oxidation of the silicon film 38 to form a thermal oxidation film 39; removing gate inversion resist patterns after forming the gate inversion resist patterns in a region except a gate forming region and removing the sidewall 37 in the gate forming region; and etching the semiconductor substrate 2 by using the thermal oxidation film 39 as a mask to form a trench. COPYRIGHT: (C)2009,JPO&INPIT