PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME
PROBLEM TO BE SOLVED: To simultaneously form a fine line pattern and a thick line pattern using an enhancer mask capable of performing simultaneous formation of a fine isolated line pattern and a dense line pattern. SOLUTION: The photomask includes a first light-shielding pattern 6 having a first di...
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| creator | SASAKO MASARU SHIMIZU TADAYOSHI MITSUSAKA AKIO |
| description | PROBLEM TO BE SOLVED: To simultaneously form a fine line pattern and a thick line pattern using an enhancer mask capable of performing simultaneous formation of a fine isolated line pattern and a dense line pattern. SOLUTION: The photomask includes a first light-shielding pattern 6 having a first dimension S1 and a second light-shielding pattern 7 having a second dimension S2 larger than the first dimension S1, which are formed on a transparent substrate 1. The first light-shielding pattern 6 includes a first semi-light-shielding portion 2A and an auxiliary pattern 3 which is arranged within the first semi-light-shielding portion 2A and allows the exposing light to pass through in an opposite phase. The second light-shielding pattern 7 includes a second semi-light-shielding portion 2B and a light-shielding portion 5. COPYRIGHT: (C)2009,JPO&INPIT |
| format | Patent |
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SOLUTION: The photomask includes a first light-shielding pattern 6 having a first dimension S1 and a second light-shielding pattern 7 having a second dimension S2 larger than the first dimension S1, which are formed on a transparent substrate 1. The first light-shielding pattern 6 includes a first semi-light-shielding portion 2A and an auxiliary pattern 3 which is arranged within the first semi-light-shielding portion 2A and allows the exposing light to pass through in an opposite phase. The second light-shielding pattern 7 includes a second semi-light-shielding portion 2B and a light-shielding portion 5. 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SOLUTION: The photomask includes a first light-shielding pattern 6 having a first dimension S1 and a second light-shielding pattern 7 having a second dimension S2 larger than the first dimension S1, which are formed on a transparent substrate 1. The first light-shielding pattern 6 includes a first semi-light-shielding portion 2A and an auxiliary pattern 3 which is arranged within the first semi-light-shielding portion 2A and allows the exposing light to pass through in an opposite phase. The second light-shielding pattern 7 includes a second semi-light-shielding portion 2B and a light-shielding portion 5. COPYRIGHT: (C)2009,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME |
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