PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME
PROBLEM TO BE SOLVED: To simultaneously form a fine line pattern and a thick line pattern using an enhancer mask capable of performing simultaneous formation of a fine isolated line pattern and a dense line pattern. SOLUTION: The photomask includes a first light-shielding pattern 6 having a first di...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To simultaneously form a fine line pattern and a thick line pattern using an enhancer mask capable of performing simultaneous formation of a fine isolated line pattern and a dense line pattern. SOLUTION: The photomask includes a first light-shielding pattern 6 having a first dimension S1 and a second light-shielding pattern 7 having a second dimension S2 larger than the first dimension S1, which are formed on a transparent substrate 1. The first light-shielding pattern 6 includes a first semi-light-shielding portion 2A and an auxiliary pattern 3 which is arranged within the first semi-light-shielding portion 2A and allows the exposing light to pass through in an opposite phase. The second light-shielding pattern 7 includes a second semi-light-shielding portion 2B and a light-shielding portion 5. COPYRIGHT: (C)2009,JPO&INPIT |
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