SOLID-STATE IMAGING ELEMENT AND IMAGING APPARATUS

PROBLEM TO BE SOLVED: To provide a solid-state imaging element capable of acquiring reference signals of optical black level with high accuracy, without causing deterioration of optical characteristics. SOLUTION: In the solid-state imaging element 5, including a large number of photoelectric conversion elements 51 disposed on a semiconductor substrate, the photoelectric conversion elements 51 include effective photoelectric conversion elements 51 as photoelectric conversion elements for acquiring imaging signals, corresponding to light from a subject; and OB photoelectric conversion elements 51 as the photoelectric conversion elements for acquiring reference signals of optical black level, where a region provided with the effective photoelectric conversion elements 51 is an effective pixel region 57 and a region provided with the OB photoelectric conversion element 51 is an OB pixel region 56. The solid-state imaging element 5 is provided with a light-shielding film 63, provided on at least the upper part of the effective pixel region 57 and having an opening K formed on the upper part of the effective photoelectric conversion elements 51; and a light-shielding film 60, provided on the upper part of the OB pixel region 56 and electrically separated from the light-shielding film 63. COPYRIGHT: (C)2009,JPO&INPIT