MULTIFACETED GATE MOSFET DEVICE

PROBLEM TO BE SOLVED: To prevent dopant impurities in a gate electrode from diffusing through a gate insulator. SOLUTION: A multifaceted gate MOSFE device includes: a strained Si-based monocrystalline strip 510 which has a center part and two end parts and has multifaceted channel regions 511 and 512 in the center part and has a source and a drain 540 in the end parts; gate insulators 520 and 530 covering the channel regions; a gate 500 which overlays at least two faces of the channel regions 511 and 512 and interfaces with the gate insulators; supporting platforms 590 and 595 which are engaged with the strained Si-based monocrystalline strip by bonding means. The gate includes a first layer 500 disposed on top faces of the gate insulators, and the first layer comprises a Si:C or SiGe:C. COPYRIGHT: (C)2009,JPO&INPIT