INFRARED RAY DETECTOR

PROBLEM TO BE SOLVED: To provide an infrared ray detector having a small amount of dark current and sufficient sensitivity realizing a desired long wavelength property. SOLUTION: There is provided an infrared ray detector having a small amount of dark current and sufficient sensitivity obtaining a d...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	NISHINO HIROSHI, KIBE MICHIYA, UCHIYAMA YASUHITO, OKAMURA HISAHIRO, NAGASHIMA MITSUHIRO, MATSUKURA YUSUKE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an infrared ray detector having a small amount of dark current and sufficient sensitivity realizing a desired long wavelength property. SOLUTION: There is provided an infrared ray detector having a small amount of dark current and sufficient sensitivity obtaining a desired long wavelength property. The infrared ray detector has a laminate constituted by alternately laminating an intermediate layer and a quantum dot layer having a plurality of quantum dots with a narrower bandgap than that of the intermediate layer. The infrared ray detector for detecting an infrared ray by detecting photocurrent generated at the time of irradiation of the laminate with the infrared ray, further has: a first barrier layer which is provided on one side of the quantum dot layer and which has a wider bandgap than that of the intermediate layer; and a second barrier layer which is provided on the other side of the quantum dot layer and which has a wider bandgap than that of the intermediate layer. COPYRIGHT: (C)2009,JPO&INPIT