SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving resistance to load short-circuit by suppressing the temperature rise of the semiconductor device during the short-circuit of a load. SOLUTION: The semiconductor device is provided with an emitter electrode 20 formed on the surface side of semiconductor substrates 10-14 and a collector electrode 21 formed on the backside, and a vertical type semiconductor element configured so as to make a current flow between the emitter electrode 20 and the collector electrode 21 is formed. The thicknesses of the emitter electrode 20 and the collector electrode 21 are respectively ≥5 μm, and the thickness of the emitter electrode 20 and the thickness of the collector electrode 21 are respectively the same. COPYRIGHT: (C)2009,JPO&INPIT