DRY ETCHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a dry etching method which can prevent side etching of resist from occurring and can process a base film into a desired shape in an excellent way, and to provide a method for manufacturing a semiconductor device using the same. SOLUTION: The dry etching method etches...

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1. Verfasser: NAKAZONO SHINSUKE
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a dry etching method which can prevent side etching of resist from occurring and can process a base film into a desired shape in an excellent way, and to provide a method for manufacturing a semiconductor device using the same. SOLUTION: The dry etching method etches a base film 110 using a multilayer resist on which a lower layer resist 120, an interlayer 130, and an upper layer resist 140 are laminated in order from the bottom thereof, wherein the method includes: a step (a) of etching the lower layer resist 120 using an etching gas containing a primary gas and a secondary gas with the upper layer resist 140 and the interlayer 130 used as a mask after the multilayer resist has been formed on the base film 110; and a step (b) of etching the base film 110 using an etching gas containing the secondary gas after the step (a) with the lower layer resist 120 used as a mask. The secondary gas is a gas for etching the base film 110. COPYRIGHT: (C)2009,JPO&INPIT