MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SOLID-STATE IMAGING DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which an impurity region is formed narrowly and deeply, and provide a solid-state imaging device. SOLUTION: The manufacturing method of the semiconductor device includes a process for forming a first hard mask 6 having an opening on a substrate, a process for forming a sacrifice film 8 on a side surface of the opening 5 of the first hard mask 6, a process for forming a second hard mask 9 on an opening having the sacrifice film 8 on the side surface, a process for eliminating the sacrifice film 8 after forming the second hard mask 9, a process for ion-implanting first conductive type impurities 7 through the first hard mask 6, and a process for ion-implanting second conductive type impurities 11 through the first and second hard masks 6, 9. COPYRIGHT: (C)2009,JPO&INPIT