NON-VOLATILE MEMORY TRANSISTOR AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a non-volatile memory transistor capable of efficiently injecting carrier by using a standard CMOS process. SOLUTION: The N-type non-volatile memory transistor for storing data by injecting charge to a side spacer and changing a threshold voltage is constituted of a transistor where the film thickness of a gate insulating film is the same as that of the gate insulating film of an I/O transistor, the impurity concentration of a channel region is the same as or higher than that of a core transistor, a P-type region with the higher concentration compared with the channel region is formed in the LDD region of a drain, and also a polysilicon for a gate electrode is a P-type polysilicon. COPYRIGHT: (C)2009,JPO&INPIT