OPTICAL SEMICONDUCTOR DEVICE, WAVELENGTH VARIABLE LIGHT SOURCE USING THE SAME AND OPTICAL TOMOGRAPHIC IMAGE ACQUIRING APPARATUS

OPTICAL SEMICONDUCTOR DEVICE, WAVELENGTH VARIABLE LIGHT SOURCE USING THE SAME AND OPTICAL TOMOGRAPHIC IMAGE ACQUIRING APPARATUS

PROBLEM TO BE SOLVED: To realize an optical semiconductor device which emits beams in which polarized wave dependency is suppressed and temporally stable outputting is made. SOLUTION: This optical semiconductor device 10 is an optical semiconductor device emitting beams each having an emitted light...

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Bibliographische Detailangaben
1. Verfasser: OSATO TAKESHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
PHYSICS
TESTING
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Zusammenfassung:PROBLEM TO BE SOLVED: To realize an optical semiconductor device which emits beams in which polarized wave dependency is suppressed and temporally stable outputting is made. SOLUTION: This optical semiconductor device 10 is an optical semiconductor device emitting beams each having an emitted light center wavelength of not less than 0.9 μm and not more than 1.2 μm, comprises an InxGa1-xAs substrate (X≠1) 11, and a tensile strain quantum well active layer 15. Generally, this optical semiconductor device has a gain for a TE mode. The optical semiconductor device 10 increases the gain for a TM mode by introducing a tensile strain, so that the optical gains for the TE mode and the TM mode are balanced. COPYRIGHT: (C)2009,JPO&INPIT