NONVOLATILE SEMICONDUCTOR MEMORY SYSTEM HAVING HIGH-SPEED FAST PROGRAMMING FUNCTION AND READING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory system capable of high-speed programming and a reading method thereof. SOLUTION: A reading and writing method for a flash memory device includes: (a) a step of determining to program first data in high-speed or normal mode; (b) a step of, in the high-speed mode, generating an error correction code from the first data by a multi-bit ECC engine to generate second data; (c) a step of programming the second data in a cell array by a program voltage having a second start voltage higher than a first start voltage; and (d) a step of reading the programmed second data from the cell array to detect and correct an error by the multi-bit ECC engine and outputting the corrected data. COPYRIGHT: (C)2009,JPO&INPIT