MAGNETO-RESISTIVE EFFECT ELEMENT WITH SPACER LAYER INCLUDING NON-MAGNETIC CONDUCTOR PHASE

PROBLEM TO BE SOLVED: To achieve a magnetic resistive effect element for acquiring a resistance value capable of achieving the suppression of noise and the suppression of an influence of spin torque and a large MR ratio. SOLUTION: An MR element is provided with a free layer 25 whose magnetizing direction is changed according to a signal magnetic field; a fixed layer 23 whose magnetizing direction is fixed; and a spacer layer 24 arranged between those layers. The spacer layer 24 has a first region 41; a second region 42; and a third region 43 shaped like a layer, and arranged in a direction crossing the face of each layer of the MR element. This second region 42 is interposed between the first region 41 and the third region 43. The first region 41 and the third region 43 are composed of oxide semiconductors, and the second region 42 includes at least a non-magnetic conductor phase between a non-magnetic conductor phase and an oxide semiconductor phase. COPYRIGHT: (C)2009,JPO&INPIT