INDIRECT QUALITY EVALUATION METHOD FOR GETTERING LAYER FORMED ON WAFER BACKSIDE

PROBLEM TO BE SOLVED: To provide an indirect evaluation method by which the quality of a gettering layer formed on a backside of a wafer can be more easily and correctly confirmed compared to the conventional method. SOLUTION: The indirect quality evaluation method for a gettering layer has a sandbl...

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1. Verfasser:	MIYAZAKI MORIMASA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an indirect evaluation method by which the quality of a gettering layer formed on a backside of a wafer can be more easily and correctly confirmed compared to the conventional method. SOLUTION: The indirect quality evaluation method for a gettering layer has a sandblasting step of striking sandblasts against a front surface of the wafer to form shot marks, a cleaning step of cleaning the front surface of the wafer, and a measuring step of measuring the in-plane distribution and density of shot marks on the front surface of the wafer using a particle counter. COPYRIGHT: (C)2009,JPO&INPIT