SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor apparatus and a method of manufacturing the same, capable of reducing the parasitic capacitance of an element isolation region that has a deep trench isolation (DTI) shape. SOLUTION: An element isolation region is formed on a semiconductor substrate 1...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SAKAMOTO TOSHIHIRO, KITAHARA HIROYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!