ETCHING SOLUTION

PROBLEM TO BE SOLVED: To provide an etching solution for a photo mask, which is excellent in moistness wettability with respect to a material to be etched (a metallic thin film), especially, to an electron beam resist pattern, and also excellent in storage stability with a stable and highly and fine...

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Bibliographische Detailangaben
1. Verfasser:	KOMATSU TOSHIO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS THEREFOR METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an etching solution for a photo mask, which is excellent in moistness wettability with respect to a material to be etched (a metallic thin film), especially, to an electron beam resist pattern, and also excellent in storage stability with a stable and highly and finely precise etching effect. SOLUTION: The etching solution contains a compound expressed by a general expression (1), wherein Rf1 and Rf2 are a 1-4C straight-chain fluorocarbon group, where H in an alkyl group is entirely substituted with F or are a branched fluorocarbon group; X is kalium, lithium, or natrium ion. COPYRIGHT: (C)2009,JPO&INPIT