SEPARATION-MATERIAL COMPOSITION FOR RESIST AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a separation-material composition for a resist, with which photoresist residues after dry etching and polymers can be easily removed and which has a component composition not to erode or oxidize a low dielectric constant insulation film. SOLUTION: The separation-mate...

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Hauptverfasser:	SUZUKI TOMOKO, ASADA KAZUMI, MURAMATSU MASAFUMI, IWAMOTO ISATO, AOYAMA TETSUO, HIRAGA TOSHITAKA
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a separation-material composition for a resist, with which photoresist residues after dry etching and polymers can be easily removed and which has a component composition not to erode or oxidize a low dielectric constant insulation film. SOLUTION: The separation-material composition for a resist is an aqueous solution containing at least phosphonic acid (H2PHO3) and water-soluble organic solvent. (a) After a resist mask 22 is removed by an ashing process, (b) the separation-material composition for a resist is used to separate and remove at least either residues of the resist mask or a by-product polymer. COPYRIGHT: (C)2009,JPO&INPIT