SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR SWITCHING DEVICE USING THE SAME

PROBLEM TO BE SOLVED: To significantly reduce a side gate effect on an field effect transistor in a semiconductor integrated circuit device formed of a plurality of semiconductor electronic materials including the field effect transistor. SOLUTION: In the semiconductor integrated circuit device formed of the plurality of semiconductor electronic materials including the field effect transistor, carrier accumulation is suppressed on an interface so that energy prohibition band discontinuity caused between the interface with a hetero semiconductor junction in a buffer chemical compound semiconductor layer in an element isolation region 105 and the interface with a substrate 101 and a buffer chemical compound semiconductor layer causes no potential barrier when a majority carrier of the field effect transistor is conducted in the substrate. This remarkably reduces the side gate effect from a resistance element 103 adjacent to the field effect transistor. COPYRIGHT: (C)2009,JPO&INPIT