SEMICONDUCTOR STORAGE DEVICE AND CONTROL METHOD THEREOF

PROBLEM TO BE SOLVED: To read data from a semiconductor storage device at high speed. SOLUTION: In the semiconductor storage device 40, bit lines and word lines WL are arranged in matrix. At intersections of the bit lines BL and the word lines WL, memory cells MC each constituted of a diode and fuse...

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1. Verfasser: SUZUKI ATSUHIRO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To read data from a semiconductor storage device at high speed. SOLUTION: In the semiconductor storage device 40, bit lines and word lines WL are arranged in matrix. At intersections of the bit lines BL and the word lines WL, memory cells MC each constituted of a diode and fuse connected in parallel between the bit lines BL and the word lines WL are arranged. In a diode arranged in a memory cell MC, a cathode is connected with a word line WL and an anode is connected with a bit line BL. In a fuse arranged in the memory cell MC, one end is connected with the word line WL and the other end is connected with the bit line BL. COPYRIGHT: (C)2009,JPO&INPIT