HIGH-TEMPERATURE CATHODE FOR PLASMA ETCHING

PROBLEM TO BE SOLVED: To provide a cathode generally suitable for use in high-temperature plasma etching applications. SOLUTION: In one embodiment, the cathode includes a ceramic electrostatic chuck fixed to the base. A cooling duct is formed inside the base. A rigid supporting ring is arranged betw...

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Bibliographische Detailangaben
Hauptverfasser:	EGAMI GLEN E, MATYUSHKIN ALEXANDER, KOOSAU DENIS M, YENDLER BORIS S
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a cathode generally suitable for use in high-temperature plasma etching applications. SOLUTION: In one embodiment, the cathode includes a ceramic electrostatic chuck fixed to the base. A cooling duct is formed inside the base. A rigid supporting ring is arranged between the chuck and the base for keeping the chuck and the base in isolated relation. COPYRIGHT: (C)2009,JPO&INPIT