MANUFACTURING METHOD OF PHOTOELECTRIC CONVERTING ELEMENT
PROBLEM TO BE SOLVED: To provide a manufacturing method of a photoelectric converting element that can suppress formation of an inversion layer formed where a silicon substrate and a silicon nitride film come into contact with each other. SOLUTION: The manufacturing method of the photoelectric conve...
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creator | TAKAKURA TOMOYUKI |
description | PROBLEM TO BE SOLVED: To provide a manufacturing method of a photoelectric converting element that can suppress formation of an inversion layer formed where a silicon substrate and a silicon nitride film come into contact with each other. SOLUTION: The manufacturing method of the photoelectric converting element includes a stage of forming the silicon nitride film on one principal surface of the silicon substrate, the manufacturing method of the photoelectric converting element being characterized in that the silicon substrate is a (p) type on the principal surface side and has the principal surface subjected to a surface treatment using plasma produced using raw material gas containing nitrogen gas before the silicon nitride film is formed. COPYRIGHT: (C)2009,JPO&INPIT |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2009021358A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2009021358A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2009021358A3</originalsourceid><addsrcrecordid>eNrjZLDwdfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1MI8PAP8Xf1cXUOCfJ0VnD29wtzDQoBKQGK-br6hfAwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDA0sDI0NjUwtHY6IUAQDZayk3</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MANUFACTURING METHOD OF PHOTOELECTRIC CONVERTING ELEMENT</title><source>esp@cenet</source><creator>TAKAKURA TOMOYUKI</creator><creatorcontrib>TAKAKURA TOMOYUKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a manufacturing method of a photoelectric converting element that can suppress formation of an inversion layer formed where a silicon substrate and a silicon nitride film come into contact with each other. SOLUTION: The manufacturing method of the photoelectric converting element includes a stage of forming the silicon nitride film on one principal surface of the silicon substrate, the manufacturing method of the photoelectric converting element being characterized in that the silicon substrate is a (p) type on the principal surface side and has the principal surface subjected to a surface treatment using plasma produced using raw material gas containing nitrogen gas before the silicon nitride film is formed. COPYRIGHT: (C)2009,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090129&DB=EPODOC&CC=JP&NR=2009021358A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090129&DB=EPODOC&CC=JP&NR=2009021358A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKAKURA TOMOYUKI</creatorcontrib><title>MANUFACTURING METHOD OF PHOTOELECTRIC CONVERTING ELEMENT</title><description>PROBLEM TO BE SOLVED: To provide a manufacturing method of a photoelectric converting element that can suppress formation of an inversion layer formed where a silicon substrate and a silicon nitride film come into contact with each other. SOLUTION: The manufacturing method of the photoelectric converting element includes a stage of forming the silicon nitride film on one principal surface of the silicon substrate, the manufacturing method of the photoelectric converting element being characterized in that the silicon substrate is a (p) type on the principal surface side and has the principal surface subjected to a surface treatment using plasma produced using raw material gas containing nitrogen gas before the silicon nitride film is formed. COPYRIGHT: (C)2009,JPO&INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDwdfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1MI8PAP8Xf1cXUOCfJ0VnD29wtzDQoBKQGK-br6hfAwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDA0sDI0NjUwtHY6IUAQDZayk3</recordid><startdate>20090129</startdate><enddate>20090129</enddate><creator>TAKAKURA TOMOYUKI</creator><scope>EVB</scope></search><sort><creationdate>20090129</creationdate><title>MANUFACTURING METHOD OF PHOTOELECTRIC CONVERTING ELEMENT</title><author>TAKAKURA TOMOYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2009021358A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKAKURA TOMOYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKAKURA TOMOYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURING METHOD OF PHOTOELECTRIC CONVERTING ELEMENT</title><date>2009-01-29</date><risdate>2009</risdate><abstract>PROBLEM TO BE SOLVED: To provide a manufacturing method of a photoelectric converting element that can suppress formation of an inversion layer formed where a silicon substrate and a silicon nitride film come into contact with each other. SOLUTION: The manufacturing method of the photoelectric converting element includes a stage of forming the silicon nitride film on one principal surface of the silicon substrate, the manufacturing method of the photoelectric converting element being characterized in that the silicon substrate is a (p) type on the principal surface side and has the principal surface subjected to a surface treatment using plasma produced using raw material gas containing nitrogen gas before the silicon nitride film is formed. COPYRIGHT: (C)2009,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | MANUFACTURING METHOD OF PHOTOELECTRIC CONVERTING ELEMENT |
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