MANUFACTURING METHOD OF PHOTOELECTRIC CONVERTING ELEMENT

PROBLEM TO BE SOLVED: To provide a manufacturing method of a photoelectric converting element that can suppress formation of an inversion layer formed where a silicon substrate and a silicon nitride film come into contact with each other. SOLUTION: The manufacturing method of the photoelectric conve...

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Bibliographische Detailangaben
1. Verfasser:	TAKAKURA TOMOYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a manufacturing method of a photoelectric converting element that can suppress formation of an inversion layer formed where a silicon substrate and a silicon nitride film come into contact with each other. SOLUTION: The manufacturing method of the photoelectric converting element includes a stage of forming the silicon nitride film on one principal surface of the silicon substrate, the manufacturing method of the photoelectric converting element being characterized in that the silicon substrate is a (p) type on the principal surface side and has the principal surface subjected to a surface treatment using plasma produced using raw material gas containing nitrogen gas before the silicon nitride film is formed. COPYRIGHT: (C)2009,JPO&INPIT