METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To solve the problem that a barrier film present between metal electrodes needs to be insulated since the barrier film is conductive, even though a thick metal electrode can be formed on the surface of a semiconductor element using a plating method by forming the barrier film when forming the metal electrode on the surface of the semiconductor element. SOLUTION: A conductive barrier film 10 is formed on the surface of the semiconductor element 14 where an interlayer insulating film 12 is formed. After forming the metal electrode 5 on the surface of the barrier film 10, the semiconductor element 14 is thermally oxidized. The barrier film 10c in a region where the metal electrode 4 is not formed is oxidized and indicates insulation. Thus, the metal electrodes are insulated with each other. Also, for the barrier films 10a and 10b in a region where the metal electrode 5 is formed, the metal electrode 5 acts as a mask and they keep conductivity without being oxidized. Thus, the conduction of the metal electrode 5 and the semiconductor element 14 is secured. Thereafter, by removing an oxide film 22 on the surface of the metal electrode 5, the conduction of the metal electrode 5 is secured as well. COPYRIGHT: (C)2009,JPO&INPIT