FOREIGN MATTER REMOVAL METHOD AND CRYSTAL GROWTH METHOD

PROBLEM TO BE SOLVED: To provide a foreign matter removal method which easily and surely removes foreign matters floating on the surface of a melt liquid accumulated in a crucible. SOLUTION: This foreign matter removal method contains a melting process in which a silicon raw material is melt in a cr...

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Bibliographische Detailangaben
Hauptverfasser:	NASU MASAAKI, OTAKE YASUTOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a foreign matter removal method which easily and surely removes foreign matters floating on the surface of a melt liquid accumulated in a crucible. SOLUTION: This foreign matter removal method contains a melting process in which a silicon raw material is melt in a crucible 5 and a silicon melt liquid 3 is accumulated, a solidified matter forming process in which a solidified foreign matter is formed by gathering foreign matters 6 floating on the surface of the silicon melt liquid 3 in the center of the silicon melt liquid 3 and solidifying a part of the surface of the silicon melt liquid 3 around the foreign matters 6, and a solidified matter recovery process in which the solidified foreign matter formed in the solidified matter forming process is recovered. COPYRIGHT: (C)2009,JPO&INPIT