SEMICONDUCTOR MEMORY DEVICE AND ITS DATA READOUT METHOD

PROBLEM TO BE SOLVED: To obtain a memory which does not make an erroneous write in reading even though a read-out voltage is increased. SOLUTION: A magnetic memory element TMR is arranged for every memory cell MC and equipped with a storage layer 103. A control lines group includes a plurality of first common lines (e.g. bit lines BLs) connecting sides of one end in common to the row and column directions and a plurality of second common lines (e.g. source lines SLs) similarly connecting sides of other end in common with respect to a plurality of magnetic memory elements. Potentials and current amounts of the control lines group are controlled by a read-out drive circuit so that a potential difference becoming the read-out voltage (VBL) is generated on a pair of first and second common lines with respect to a selection magnetic memory element TMR which is selected for reading out bit data, and also an external magnetic field H parallel with a magnetizing direction is generated and impressed to the storage layer 103. COPYRIGHT: (C)2009,JPO&INPIT