SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for lowering a threshold voltage of a transistor without deterioration of short-channel characteristic. SOLUTION: Nitrogen (or halogen element) is diffused into a semiconductor substrate 101 of NMOS region (or PMOS reg...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: NISHIDA MASAO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for lowering a threshold voltage of a transistor without deterioration of short-channel characteristic. SOLUTION: Nitrogen (or halogen element) is diffused into a semiconductor substrate 101 of NMOS region (or PMOS region). Thereafter, gate insulating films 107N, 107P are formed on a semiconductor substrate 101 of the NMOS region (or PMOS region) by conducting heat treatment. COPYRIGHT: (C)2009,JPO&INPIT