PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON

PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON

PROBLEM TO BE SOLVED: To reduce the concentration of pyrophoric and high-boiling disilanes in process streams. SOLUTION: This process for producing polycrystalline silicon comprises the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tet...

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Bibliographische Detailangaben
Hauptverfasser: KENDIG JAMES EDWARD, MCQUISTON TODD MICHAEL, LANDIS DAVID RUSSELL, ZALAR MICHAEL MATTHEW
Format: Patent
Sprache:eng
Schlagworte:
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Zusammenfassung:PROBLEM TO BE SOLVED: To reduce the concentration of pyrophoric and high-boiling disilanes in process streams. SOLUTION: This process for producing polycrystalline silicon comprises the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilane and disilane described by formula HnCl6-nSi2(where n is a value of 0 to 6) and (B) co-feeding the effluent mixture and hydrogen to a reactor at a temperature within the range of about 800 to 1,200°C thereby effecting hydrogenation of the tetrachlorosilane to trichlorosilane and conversion of the disilane to monosilanes. COPYRIGHT: (C)2009,JPO&INPIT