METHOD FOR DETERMINING PHOTOMASK DEFECT

PROBLEM TO BE SOLVED: To provide a method for determining a photomask defect for improving the production yield of photomasks and suppressing the cost of an inspection. SOLUTION: A circuit data 1 where data of a circuit to be fabricated on a semiconductor substrate by photolithography is prepared, and a layout data 2 according to the circuit data is prepared. The layout data 2 is converted into a compensated layout data 3 by using RET (resolution enhancement technology). Attribute information is imparted to each pattern in a mask production data 4, the attribute information relating to whether the pattern corresponds to an active region where an electrically active region is to be formed, or corresponds to a nonactive region where an electrically nonactive region is to be formed upon fabricating on the semiconductor substrate by photolithography. Upon determining whether the pattern formed on the photomask has a defect in an inspection step 6, the defect determination reference is varied according to the attribute information. COPYRIGHT: (C)2009,JPO&INPIT