METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SUBSTRATE TREATMENT APPARATUS

PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device, where the productivity is improved by shortening the down time in cleaning, and to provide a substrate treatment apparatus. SOLUTION: The method for producing a semiconductor device includes: a process where a substrate is carried into a treatment chamber; a process where a gaseous starting material is fed into the treatment chamber, so as to form a ruthenium-containing film on the substrate; a process where the substrate after the film deposition is carried out from the inside of the treatment chamber; and a process where a stage in which a fluorine atom or chlorine atom-containing cleaning gas is fed into the treatment chamber, so as to remove a ruthenium-containing deposit stuck to the inside of the treatment chamber and a stage in which, upon the removal of the deposit, by-products produced so as to cover the surface of the deposit are removed, and the surface of the deposit is exposed are alternately repeated, thus the inside of the treatment chamber is cleaned. COPYRIGHT: (C)2009,JPO&INPIT