CHEMICAL VAPOR DEPOSITION APPARATUS, AND MANUFACTURING METHOD OF FET AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To reduce heat radiation from a heating element 4 to a substrate 9 in a chemical vapor deposition apparatus. SOLUTION: The heating element 4 is turned to a wire-like member which is disposed between a first ring 42 on the side of a gas distributor 32 for supplying a raw materia...

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Bibliographische Detailangaben
1. Verfasser:	NOMURA HIDEJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To reduce heat radiation from a heating element 4 to a substrate 9 in a chemical vapor deposition apparatus. SOLUTION: The heating element 4 is turned to a wire-like member which is disposed between a first ring 42 on the side of a gas distributor 32 for supplying a raw material gas and a second ring 42 on the side of a substrate holder 5 and generates Joule heat by being energized. By making the heating element 4 not parallel with the substrate 9, the amount of radiation heat reaching the substrate 9 from the heating element 4 is reduced. COPYRIGHT: (C)2009,JPO&INPIT