SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device having a MISFET structure where distortion is caused in a channel region by a method different from a conventional method. SOLUTION: The semiconductor device has a semiconductor substrate, an n-type MISFET having first source/drain regions and...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	NAGATOMO KOJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!