SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device having a MISFET structure where distortion is caused in a channel region by a method different from a conventional method. SOLUTION: The semiconductor device has a semiconductor substrate, an n-type MISFET having first source/drain regions and a first channel region, which are formed on the semiconductor substrate, a p-type MISFET having second source/drain regions and a second channel region, which are formed on the semiconductor substrate, a first contact plug which is connected to the first source/drain regions and gives extension distortion to the first channel region, and a second contact plug which is connected to the second source/drain regions and gives compression distortion to the second channel region. COPYRIGHT: (C)2009,JPO&INPIT