SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To improve moisture resistance reliability of a semiconductor device which is provided with a silicon substrate having a plurality of columnar electrodes placed on a top surface side thereof. SOLUTION: Circumferential sides of a silicon substrate 2 of a semiconductor construct...

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1. Verfasser: KOTANI SHOICHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To improve moisture resistance reliability of a semiconductor device which is provided with a silicon substrate having a plurality of columnar electrodes placed on a top surface side thereof. SOLUTION: Circumferential sides of a silicon substrate 2 of a semiconductor construct 1, a dielectric film 4, and a protection film 6, and a top surface of the protection film 6 including a wiring 8 of the semiconductor construct 1 are covered with a sealing film 12. A bottom surface of the silicon substrate 2 of the semiconductor construct 1 and a bottom surface of the sealing film 12 provided on the circumference thereof are covered with a protection film 14. At that time, the sealing film 12 and protection film 14 are formed of an epoxy resin impervious to water, thus making it possible to improve moisture resistance reliability. COPYRIGHT: (C)2009,JPO&INPIT