SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor substrate capable of manufacturing a semiconductor substrate where hole density is fully improved by fully suppressing deterioration in the characteristics of the semiconductor substrate and activating impurities at a p-type region, and to provide a semiconductor substrate. SOLUTION: The manufacturing method of a substrate for MOSFET comprises: a substrate preparation process for preparing substrates; a p-type well formation process for forming a p-type well made of a semiconductor including p-type-conductivity impurities on the substrate; a hydrogen removal layer formation process for forming a hydrogen removal layer including a transition metal in contact with the p-type well; and a light irradiation process for applying light having a wavelength of not more than 2 μm and a pulse width of not more than 100 ns to the p-type well where the hydrogen removal layer is formed. COPYRIGHT: (C)2009,JPO&INPIT