SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces current consumption in a standby period by a simple constitution. SOLUTION: The device has a memory cell array having a plurality of CMOS static type memory cells provided at the intersections of a plurality of word lines and a pl...

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Bibliographische Detailangaben
Hauptverfasser: HIRAYAMA MASAYUKI, ANAMI NAOYUKI, HASEGAWA MASAMI, HAYASHI YAYOI, KANEMITSU MICHITARO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces current consumption in a standby period by a simple constitution. SOLUTION: The device has a memory cell array having a plurality of CMOS static type memory cells provided at the intersections of a plurality of word lines and a plurality of complementary bit lines. Between a first source line connected with the sources of first conductivity type MOSFETs constituting first and second CMOS inverter circuits constituting the static type memory cells and a first power line corresponding to it, a switch MOSFET which is turned off in a first operation mode and turned on in a second operation mode different from the first operation mode and diode-type first and second conductivity type MOSFETs are provided in parallel. A second source line connected with the sources of the second conductivity type MOSFETs constituting the first and second CMOS inverter circuits is connected with a second power line corresponding to it. COPYRIGHT: (C)2009,JPO&INPIT