MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of efficiently activating even a semiconductor layer having a deeply implanted impurity by a comparatively simple method. SOLUTION: The manufacturing method of a semiconductor device includes a step of implanting an impurity into a semiconductor layer, and a step of irradiating the semiconductor layer with a laser to activate the layer where the impurity is implanted. In the laser irradiation step, two laser oscillators each generating pulses of 400 nm-600 nm wavelength and 150 nsec-250 nsec pulse-width are used to execute preceeding pulse irradiation after a predetermined delay time in succession to succeeding pulse irradiation, and the energy density of each pulse and a delay time are set so that the energy density of the succeeding pulse may be larger than the energy density of a preceeding pulse, and a maximum surface temperature of an irradiation region of the succeeding pulse irradiation may be substantially the same as the maximum surface temperature of an irradiation region of the preceeding pulse irradiation. COPYRIGHT: (C)2009,JPO&INPIT