CHEMICAL VAPOR DEPOSITION SILICON CARBIDE PRODUCT

PROBLEM TO BE SOLVED: To provide an improved chemical vapor deposition silicon carbide product and a method of combining parts of the product. SOLUTION: A chemical vapor deposition silicon carbide product and a method of manufacturing the chemical vapor deposition silicon carbide product are disclos...

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Hauptverfasser:	LAIS KEVIN D, PICKERING MICHAEL A, TRIBA JAMIE L
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an improved chemical vapor deposition silicon carbide product and a method of combining parts of the product. SOLUTION: A chemical vapor deposition silicon carbide product and a method of manufacturing the chemical vapor deposition silicon carbide product are disclosed. This chemical vapor deposition silicon carbide product comprises a plurality of parts 112, 114 combined by a sintered ceramic connecting part 116. The connecting part is strengthened and the tolerance at the connecting part of the product is kept. The product is used in a semiconductor treatment. COPYRIGHT: (C)2009,JPO&INPIT