NANOWIRE TRANSISTOR AND MANUFACTURING METHOD THEREFOR
PROBLEM TO BE SOLVED: To provide a method for removing a recessed stringer in manufacturing a nanowire transistor (NWT). SOLUTION: According to the method, a cylindrical nanostructure is provided, which has an axis whose external surface is in contact with a substrate surface and which contains an i...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | CROWDER MARK A TAKATO YUTAKA |
| description | PROBLEM TO BE SOLVED: To provide a method for removing a recessed stringer in manufacturing a nanowire transistor (NWT). SOLUTION: According to the method, a cylindrical nanostructure is provided, which has an axis whose external surface is in contact with a substrate surface and which contains an insulating semiconductor core. A conductive thin film is deposited on the nanostructure to function as a gate strap or as a combination of a gate and a gate strap. A hard mask insulator is deposited on the conductive thin film, and is subjected to anisotropic plasma etching to etch a hard mask selective region. As a result, a conductive thin film gate electrode encircling the cylindrical portion of the nanostructure is formed. COPYRIGHT: (C)2009,JPO&INPIT |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2008258622A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2008258622A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2008258622A3</originalsourceid><addsrcrecordid>eNrjZDD1c_TzD_cMclUICXL0C_YMDvEPUnD0c1HwdfQLdXN0DgkN8vRzV_B1DfHwd1EI8XANcnXzD-JhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBhZGphZmRkaOxkQpAgBobCh5</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NANOWIRE TRANSISTOR AND MANUFACTURING METHOD THEREFOR</title><source>esp@cenet</source><creator>CROWDER MARK A ; TAKATO YUTAKA</creator><creatorcontrib>CROWDER MARK A ; TAKATO YUTAKA</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method for removing a recessed stringer in manufacturing a nanowire transistor (NWT). SOLUTION: According to the method, a cylindrical nanostructure is provided, which has an axis whose external surface is in contact with a substrate surface and which contains an insulating semiconductor core. A conductive thin film is deposited on the nanostructure to function as a gate strap or as a combination of a gate and a gate strap. A hard mask insulator is deposited on the conductive thin film, and is subjected to anisotropic plasma etching to etch a hard mask selective region. As a result, a conductive thin film gate electrode encircling the cylindrical portion of the nanostructure is formed. COPYRIGHT: (C)2009,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081023&DB=EPODOC&CC=JP&NR=2008258622A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081023&DB=EPODOC&CC=JP&NR=2008258622A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CROWDER MARK A</creatorcontrib><creatorcontrib>TAKATO YUTAKA</creatorcontrib><title>NANOWIRE TRANSISTOR AND MANUFACTURING METHOD THEREFOR</title><description>PROBLEM TO BE SOLVED: To provide a method for removing a recessed stringer in manufacturing a nanowire transistor (NWT). SOLUTION: According to the method, a cylindrical nanostructure is provided, which has an axis whose external surface is in contact with a substrate surface and which contains an insulating semiconductor core. A conductive thin film is deposited on the nanostructure to function as a gate strap or as a combination of a gate and a gate strap. A hard mask insulator is deposited on the conductive thin film, and is subjected to anisotropic plasma etching to etch a hard mask selective region. As a result, a conductive thin film gate electrode encircling the cylindrical portion of the nanostructure is formed. COPYRIGHT: (C)2009,JPO&INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD1c_TzD_cMclUICXL0C_YMDvEPUnD0c1HwdfQLdXN0DgkN8vRzV_B1DfHwd1EI8XANcnXzD-JhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBhZGphZmRkaOxkQpAgBobCh5</recordid><startdate>20081023</startdate><enddate>20081023</enddate><creator>CROWDER MARK A</creator><creator>TAKATO YUTAKA</creator><scope>EVB</scope></search><sort><creationdate>20081023</creationdate><title>NANOWIRE TRANSISTOR AND MANUFACTURING METHOD THEREFOR</title><author>CROWDER MARK A ; TAKATO YUTAKA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2008258622A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>CROWDER MARK A</creatorcontrib><creatorcontrib>TAKATO YUTAKA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CROWDER MARK A</au><au>TAKATO YUTAKA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NANOWIRE TRANSISTOR AND MANUFACTURING METHOD THEREFOR</title><date>2008-10-23</date><risdate>2008</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method for removing a recessed stringer in manufacturing a nanowire transistor (NWT). SOLUTION: According to the method, a cylindrical nanostructure is provided, which has an axis whose external surface is in contact with a substrate surface and which contains an insulating semiconductor core. A conductive thin film is deposited on the nanostructure to function as a gate strap or as a combination of a gate and a gate strap. A hard mask insulator is deposited on the conductive thin film, and is subjected to anisotropic plasma etching to etch a hard mask selective region. As a result, a conductive thin film gate electrode encircling the cylindrical portion of the nanostructure is formed. COPYRIGHT: (C)2009,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2008258622A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
| title | NANOWIRE TRANSISTOR AND MANUFACTURING METHOD THEREFOR |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T00%3A37%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CROWDER%20MARK%20A&rft.date=2008-10-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2008258622A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |