NANOWIRE TRANSISTOR AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a method for removing a recessed stringer in manufacturing a nanowire transistor (NWT). SOLUTION: According to the method, a cylindrical nanostructure is provided, which has an axis whose external surface is in contact with a substrate surface and which contains an i...

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Bibliographische Detailangaben
Hauptverfasser:	CROWDER MARK A, TAKATO YUTAKA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for removing a recessed stringer in manufacturing a nanowire transistor (NWT). SOLUTION: According to the method, a cylindrical nanostructure is provided, which has an axis whose external surface is in contact with a substrate surface and which contains an insulating semiconductor core. A conductive thin film is deposited on the nanostructure to function as a gate strap or as a combination of a gate and a gate strap. A hard mask insulator is deposited on the conductive thin film, and is subjected to anisotropic plasma etching to etch a hard mask selective region. As a result, a conductive thin film gate electrode encircling the cylindrical portion of the nanostructure is formed. COPYRIGHT: (C)2009,JPO&INPIT