SOLID-STATE IMAGE PICKUP ELEMENT AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To solve the problem that, when an impurity region is formed in a substrate by ion implantation, by implanting impurities at an angle to the surface of a semiconductor substrate, the impurity region is formed at a position deviated from design and the difference from the design becomes a serious problem especially in microfabrication, in a manufacturing method for solid-state imaging element. SOLUTION: An n+-type source region 86 is formed in the surface of an n-well 83, corresponding to a center part of a rectangular ring-shaped gate electrode 85. A near-source p-type region 87 is formed adjacent to the source region 86, and further, a p+-type region 88 whose plane shape is rectangular ring shape is formed in the near-source p-type region 87. The near-source p-type region 87 is so formed, enclosing the source region 86 and having a high concentrating part that spreads to the lower part of the rectangular ring-shaped gate electrode 85, by implanting ions into a continuously or intermittently rotating substrate from an oblique direction, to the surface of the substrate by using the rectangular ring-shaped gate electrode 85 as a mask. COPYRIGHT: (C)2009,JPO&INPIT