METHOD OF PROCESSING WORKPIECE AND WIRING FORMATION METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
PROBLEM TO BE SOLVED: To provide a method of processing a workpiece capable of easily processing the workpiece in a desired shape without giving mechanical damage and thermal damage. SOLUTION: A sample 1 made of at least one type of material selected from a group comprising a semiconductor including...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | MATSUMURA MICHIO RI KARYU TSUJINO KAZUYA IMAI SHIGENORI |
| description | PROBLEM TO BE SOLVED: To provide a method of processing a workpiece capable of easily processing the workpiece in a desired shape without giving mechanical damage and thermal damage. SOLUTION: A sample 1 made of at least one type of material selected from a group comprising a semiconductor including silicon, silicon carbide, and group III-V elements is used as a workpiece. The sample 1 is immersed into a processing liquid 8 comprising a solution containing an oxidizing agent, and hydrofluoric acid or a fluoride ion. In the processing liquid 8, the workpiece is brought into contact with a wire 2 having a layer made of a catalyst in the oxidation reaction of the material at least on the surface, thus oxidizing the contact section with the wire 2 in the material 1 for dissolving into the processing liquid 8, moving the wire 2 with gravity following the dissolution of the sample 1, and cutting the sample 1 or forming a cut in the sample 1. COPYRIGHT: (C)2009,JPO&INPIT |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2008243838A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2008243838A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2008243838A3</originalsourceid><addsrcrecordid>eNqNi7EKwjAURbs4iPoPD2eF0jp0jcmLjZK8krzQsRSJk9hC_X_EKrg6XTj3nGU2WOSaFJCGxpPEEIw7QUv-0hiUCMIpaI1_Q03eCjbk4NPs5vPXW-GiFpLjbAe0RpJTUTJ5CPEY2AvGdba49fcpbb67yrYaWdb7NA5dmsb-mh7p2Z2bIs-r4lBWZSXKv6QXJCM4Sg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF PROCESSING WORKPIECE AND WIRING FORMATION METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE</title><source>esp@cenet</source><creator>MATSUMURA MICHIO ; RI KARYU ; TSUJINO KAZUYA ; IMAI SHIGENORI</creator><creatorcontrib>MATSUMURA MICHIO ; RI KARYU ; TSUJINO KAZUYA ; IMAI SHIGENORI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method of processing a workpiece capable of easily processing the workpiece in a desired shape without giving mechanical damage and thermal damage. SOLUTION: A sample 1 made of at least one type of material selected from a group comprising a semiconductor including silicon, silicon carbide, and group III-V elements is used as a workpiece. The sample 1 is immersed into a processing liquid 8 comprising a solution containing an oxidizing agent, and hydrofluoric acid or a fluoride ion. In the processing liquid 8, the workpiece is brought into contact with a wire 2 having a layer made of a catalyst in the oxidation reaction of the material at least on the surface, thus oxidizing the contact section with the wire 2 in the material 1 for dissolving into the processing liquid 8, moving the wire 2 with gravity following the dissolution of the sample 1, and cutting the sample 1 or forming a cut in the sample 1. COPYRIGHT: (C)2009,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081009&DB=EPODOC&CC=JP&NR=2008243838A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081009&DB=EPODOC&CC=JP&NR=2008243838A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATSUMURA MICHIO</creatorcontrib><creatorcontrib>RI KARYU</creatorcontrib><creatorcontrib>TSUJINO KAZUYA</creatorcontrib><creatorcontrib>IMAI SHIGENORI</creatorcontrib><title>METHOD OF PROCESSING WORKPIECE AND WIRING FORMATION METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE</title><description>PROBLEM TO BE SOLVED: To provide a method of processing a workpiece capable of easily processing the workpiece in a desired shape without giving mechanical damage and thermal damage. SOLUTION: A sample 1 made of at least one type of material selected from a group comprising a semiconductor including silicon, silicon carbide, and group III-V elements is used as a workpiece. The sample 1 is immersed into a processing liquid 8 comprising a solution containing an oxidizing agent, and hydrofluoric acid or a fluoride ion. In the processing liquid 8, the workpiece is brought into contact with a wire 2 having a layer made of a catalyst in the oxidation reaction of the material at least on the surface, thus oxidizing the contact section with the wire 2 in the material 1 for dissolving into the processing liquid 8, moving the wire 2 with gravity following the dissolution of the sample 1, and cutting the sample 1 or forming a cut in the sample 1. COPYRIGHT: (C)2009,JPO&INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7EKwjAURbs4iPoPD2eF0jp0jcmLjZK8krzQsRSJk9hC_X_EKrg6XTj3nGU2WOSaFJCGxpPEEIw7QUv-0hiUCMIpaI1_Q03eCjbk4NPs5vPXW-GiFpLjbAe0RpJTUTJ5CPEY2AvGdba49fcpbb67yrYaWdb7NA5dmsb-mh7p2Z2bIs-r4lBWZSXKv6QXJCM4Sg</recordid><startdate>20081009</startdate><enddate>20081009</enddate><creator>MATSUMURA MICHIO</creator><creator>RI KARYU</creator><creator>TSUJINO KAZUYA</creator><creator>IMAI SHIGENORI</creator><scope>EVB</scope></search><sort><creationdate>20081009</creationdate><title>METHOD OF PROCESSING WORKPIECE AND WIRING FORMATION METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE</title><author>MATSUMURA MICHIO ; RI KARYU ; TSUJINO KAZUYA ; IMAI SHIGENORI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2008243838A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MATSUMURA MICHIO</creatorcontrib><creatorcontrib>RI KARYU</creatorcontrib><creatorcontrib>TSUJINO KAZUYA</creatorcontrib><creatorcontrib>IMAI SHIGENORI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATSUMURA MICHIO</au><au>RI KARYU</au><au>TSUJINO KAZUYA</au><au>IMAI SHIGENORI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF PROCESSING WORKPIECE AND WIRING FORMATION METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE</title><date>2008-10-09</date><risdate>2008</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method of processing a workpiece capable of easily processing the workpiece in a desired shape without giving mechanical damage and thermal damage. SOLUTION: A sample 1 made of at least one type of material selected from a group comprising a semiconductor including silicon, silicon carbide, and group III-V elements is used as a workpiece. The sample 1 is immersed into a processing liquid 8 comprising a solution containing an oxidizing agent, and hydrofluoric acid or a fluoride ion. In the processing liquid 8, the workpiece is brought into contact with a wire 2 having a layer made of a catalyst in the oxidation reaction of the material at least on the surface, thus oxidizing the contact section with the wire 2 in the material 1 for dissolving into the processing liquid 8, moving the wire 2 with gravity following the dissolution of the sample 1, and cutting the sample 1 or forming a cut in the sample 1. COPYRIGHT: (C)2009,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2008243838A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD OF PROCESSING WORKPIECE AND WIRING FORMATION METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T00%3A24%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MATSUMURA%20MICHIO&rft.date=2008-10-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2008243838A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |