METHOD OF PROCESSING WORKPIECE AND WIRING FORMATION METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method of processing a workpiece capable of easily processing the workpiece in a desired shape without giving mechanical damage and thermal damage. SOLUTION: A sample 1 made of at least one type of material selected from a group comprising a semiconductor including silicon, silicon carbide, and group III-V elements is used as a workpiece. The sample 1 is immersed into a processing liquid 8 comprising a solution containing an oxidizing agent, and hydrofluoric acid or a fluoride ion. In the processing liquid 8, the workpiece is brought into contact with a wire 2 having a layer made of a catalyst in the oxidation reaction of the material at least on the surface, thus oxidizing the contact section with the wire 2 in the material 1 for dissolving into the processing liquid 8, moving the wire 2 with gravity following the dissolution of the sample 1, and cutting the sample 1 or forming a cut in the sample 1. COPYRIGHT: (C)2009,JPO&INPIT