PEROVSKITE-TYPE OXIDE RESISTANCE-VARIABLE MATERIAL AND RESISTANCE-VARIABLE ELEMENT

PROBLEM TO BE SOLVED: To provide a resistance-variable material and an element using the same which is varied in a ranges of higher than 1×108Ωcm in bulk-shape form, in a bulk state, at zero magnetic field, and at a temperature range of 50-250°K. SOLUTION: A resistance-variable material comprises a...

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Bibliographische Detailangaben
Hauptverfasser: HASEYAMA HIDEETSU, YOSHIDA KAZUYOSHI, YAMAZAKI SADAO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a resistance-variable material and an element using the same which is varied in a ranges of higher than 1×108Ωcm in bulk-shape form, in a bulk state, at zero magnetic field, and at a temperature range of 50-250°K. SOLUTION: A resistance-variable material comprises a perovskite-type manganese oxide composed of Tb1-xAxMnO3system (where A is one or more kinds of elements selected from among Ca, Ba, and Sr; and 0.1≤x≤0.5). COPYRIGHT: (C)2009,JPO&INPIT