PEROVSKITE-TYPE OXIDE RESISTANCE-VARIABLE MATERIAL AND RESISTANCE-VARIABLE ELEMENT
PROBLEM TO BE SOLVED: To provide a resistance-variable material and an element using the same which is varied in a ranges of higher than 1×108Ωcm in bulk-shape form, in a bulk state, at zero magnetic field, and at a temperature range of 50-250°K. SOLUTION: A resistance-variable material comprises a...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a resistance-variable material and an element using the same which is varied in a ranges of higher than 1×108Ωcm in bulk-shape form, in a bulk state, at zero magnetic field, and at a temperature range of 50-250°K. SOLUTION: A resistance-variable material comprises a perovskite-type manganese oxide composed of Tb1-xAxMnO3system (where A is one or more kinds of elements selected from among Ca, Ba, and Sr; and 0.1≤x≤0.5). COPYRIGHT: (C)2009,JPO&INPIT |
---|