PHOTOCATALYTIC NITROGEN-DOPED TITANIUM OXIDE THIN FILM AND ITS DEPOSITING METHOD

PROBLEM TO BE SOLVED: To deposit a photocatalytic nitrogen-doped titanium oxide thin film by a low-temperature process at high speed and at a low cost. SOLUTION: Metal Ti targets 15 are set on a backing plate 14. The gas in an apparatus is discharged and then argon gas is introduced into the apparatus through an introduction port 11 and a reactive gas is also introduced through another introduction port 18. A power source 12 is turned ON. Ti atoms are sputtered from the targets 15 by the plasma generated between the targets 15 and the burst sputtered particles are transferred to a substrate 16 by a forced current of the argon gas and accumulated on the surface of the substrate 16 while reacting with the reactive gas. Since the pressure when the thin film is deposited is made high and the forced current of an inert carrier gas is produced from the side of the target surface to the side of the substrate in gas flow sputtering, the target surface is prevented from being oxidized by oxygen gas and Ti atoms are sputtered from the target surface kept in a metal state. Therefore, the thin film can be deposited at a high speed. COPYRIGHT: (C)2009,JPO&INPIT