MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which is not easily damaged. SOLUTION: The manufacturing method of the semiconductor device comprises: a process of forming a lower electrode material; a process of forming a capacitor material on the lower electrode material; a process of forming an upper electrode on the capacitor material; a process of forming a protective film on the upper surface and side face of the upper electrode; a process of forming a capacitor insulating film by etching a part of the capacitor material with a first mask pattern provided on the protective film as a mask; and a process of forming a lower electrode by etching a part of the lower electrode material with a second mask pattern provided on the protective film as a mask. COPYRIGHT: (C)2008,JPO&INPIT