METHOD OF MANUFACTURING GALLIUM NITRIDE-SYSTEM COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE

METHOD OF MANUFACTURING GALLIUM NITRIDE-SYSTEM COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a gallium nitride-system compound semiconductor light-emitting device whose emission intensity is high and whose drive power voltage is low. SOLUTION: According to this manufacturing method, a supply ratio (M/III) of an n-type dopant and a g...

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Bibliographische Detailangaben
1. Verfasser: SAKURAI TETSURO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of manufacturing a gallium nitride-system compound semiconductor light-emitting device whose emission intensity is high and whose drive power voltage is low. SOLUTION: According to this manufacturing method, a supply ratio (M/III) of an n-type dopant and a group III element at the time of growing up a barrier layer is controlled so as to reside in a range of 4.5×10-7≤(M/III)