SUBSTRATE PROCESSING DEVICE

PROBLEM TO BE SOLVED: To provide a substrate processing device that can reduce exhaust from a chamber not to defuse an atmosphere in the chamber to the outside. SOLUTION: The substrate processing device 1 is provided with a chamber 40 to house a processing tank 20 and a shower nozzle 30 and a shutte...

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Bibliographische Detailangaben
Hauptverfasser: MURAOKA YUSUKE, UNO MASAHITO, ARAKI HIROYUKI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a substrate processing device that can reduce exhaust from a chamber not to defuse an atmosphere in the chamber to the outside. SOLUTION: The substrate processing device 1 is provided with a chamber 40 to house a processing tank 20 and a shower nozzle 30 and a shutter 41 to seal the chamber 40. Thus, a substrate W can be processed within the chamber 40 without exhausting from the chamber 40. A distance between the upper face of the processing tank 20 and the lower face of the shutter 41 is ≥20 mm and ≤50 mm, and a distance between the outer face of the processing tank 20 and the inner face of the chamber 40 is ≥5 mm and ≤20 mm. Thus, the internal volume of the chamber 40 is small, and it is unnecessary to exhaust a large volume from the chamber 40 even when the shutter 41 is opened. COPYRIGHT: (C)2008,JPO&INPIT