MEMORY ELEMENT AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To easily and inexpensively provide a memory element having a high yield. SOLUTION: The memory element has: at least a first conductive layer 110; a second conductive layer 112; and a memory layer 111 sandwiched by the first conductive layer 110 and the second conductive layer 112. The memory layer 111 is configured of nano-particles composed of a conductive material coated with an organic thin film, and formed using a liquid discharging method. More concretely, a composition in which the nano-particles composed of the conductive material coated with the organic thin film are dispersed in a solvent is discharged (jetted) as a liquid droplet, and dried to vaporize the solvent, thereby forming the memory layer 111. Writing into the memory element is executed by the application of a voltage to electrically connect the first conductive layer 110 and the second conductive layer 112 via a conductive portion formed by the fusion of the nano-particles composed of the conductive material. COPYRIGHT: (C)2008,JPO&INPIT