SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE

PROBLEM TO BE SOLVED: To improve the stability of the oscillation of the single lateral mode of an ion implantation type photonic crystalline surface-emitting laser. SOLUTION: A photonic crystalline surface-emitting laser device has a current constriction layer 14 which comprises one or a plurality...

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Bibliographische Detailangaben
Hauptverfasser:	YOKOUCHI NORIYUKI, PETER NYAKAS, KISE TOMOFUMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To improve the stability of the oscillation of the single lateral mode of an ion implantation type photonic crystalline surface-emitting laser. SOLUTION: A photonic crystalline surface-emitting laser device has a current constriction layer 14 which comprises one or a plurality of layers in an upper DBR mirror 15 and which is formed by ion implantation. A point defect in which a circular hole is not formed is formed on the center of a two-dimensional circular hole arrangement 20. When the width Z of the point defect is set to D, the width of the current opening of a current constriction structure is set to 0.3×D