SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS

PROBLEM TO BE SOLVED: To improve a picture quality by effectively supplying hydrogen in a solid-state imaging device and effectively suppressing noise generation. SOLUTION: A hydrogen discharging film 160 for supplying hydrogen to a photodiode 110 and a pixel transistor 120 is formed on a silicon substrate 100 having the photodiode 110, the pixel transistor 120 and so on formed therein. A hydrogen shielding film 170 is formed on the film 160. Since the hydrogen discharging film 160 is located in the vicinity of the upper surface of the silicon substrate 100 and the hydrogen shielding film 170 is located on the film 160, the hydrogen of the hydrogen discharging film 160 can be shielded from being diffused in an upper layer direction, the hydrogen supply efficiency to the photodiode 110 or the transistor 120 can be increased, and noise suppression can be effectively attained. COPYRIGHT: (C)2008,JPO&INPIT